IRFH5010TR2PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFH5010TR2PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Number of Pins
8
Supplier Device Package
8-PQFN (5x6)
Packaging
Cut Tape (CT)
Published
2010
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.6W
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Element Configuration
Single
Power Dissipation
250W
Turn On Delay Time
9 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds
4340pF @ 25V
Current - Continuous Drain (Id) @ 25°C
13A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs
98nC @ 10V
Rise Time
12ns
Drain to Source Voltage (Vdss)
100V
Fall Time (Typ)
8.6 ns
Turn-Off Delay Time
27 ns
Continuous Drain Current (ID)
100A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Input Capacitance
4.34nF
Recovery Time
51 ns
Drain to Source Resistance
9mOhm
Rds On Max
9 mΩ
Nominal Vgs
4 V
Height
838.2μm
Length
5.9944mm
Width
5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
IRFH5010TR2PBF Product Details
IRFH5010TR2PBF Description
IRFH5010TR2PBF emerges as a member of HEXFET? power MOSFET provided by Infineon Technologies. It is compatible with existing surface mount techniques, thus it can be manufactured in an easier way. Low thermal resistance to PCB (<0.5??C/W) supports increased power density. Low conduction losses can also be realized due to its low RDS (on) (<9m|?). As a result, IRFH5010TR2PBF is well suited for inverters in DC motors, secondary side synchronous rectification, and DC-DC brick applications.