NTLJF4156NT1G

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NTLJF4156NT1G

Manufacturer part number:NTLJF4156NT1G

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 70m Ω @ 2A, 4.5V ±8V 427pF @ 15V 6.5nC @ 4.5V 6-WDFN Exposed Pad

Case Package:SOT-23

Datasheet:NTLJF4156NT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 18 hours ago)
Factory Lead Time	6 Weeks
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	6-WDFN Exposed Pad
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
Current Rating	4.6A
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	1
Power Dissipation-Max	710mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Case Connection	DRAIN
Turn On Delay Time	4.8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	70m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	427pF @ 15V
Current - Continuous Drain (Id) @ 25°C	2.5A Tj
Gate Charge (Qg) (Max) @ Vgs	6.5nC @ 4.5V
Rise Time	9.2ns
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	9.2 ns
Turn-Off Delay Time	14.2 ns
Continuous Drain Current (ID)	3.7A
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	2.5A
Drain-source On Resistance-Max	0.09Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	20A
FET Feature	Schottky Diode (Isolated)
Height	750μm
Length	2mm
Width	2mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free