NTMFD4901NFT1G          Description

  The half-dual N-channel power MOSFET is integrated with Schottky and packaged in DFN8 (SO8FL). These N-channel power MOSFET adopt a power-level solution in a common package to minimize board space, parasitic inductance and power loss. Double N-channel power MOSFET lead-free, halogen-free / BFR-free, in line with RoHS standards. Typical applications include DC-DC converters, system voltage rails and load points.

NTMFD4901NFT1G         Features

Co-packaged power stage solution to minimize board space

Low side MOSFET with integrated Schottky

Minimized parasitic inductances

Small footprint (5mm x 6mm) for compact design

Low RDS(on) to minimize conduction losses

NTMFD4901NFT1G     Applications

DC-DC converters

System voltage rails

Point-of-load