NTR2101PT1

new-10%

Manufacturer part number:NTR2101PT1

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 8V 3.7A SOT-23

Case Package:SOT-23

Datasheet:NTR2101PT1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Subcategory	Other Transistors
Voltage - Rated DC	-8V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	240
Reach Compliance Code	not_compliant
Current Rating	-3.7A
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
JESD-30 Code	R-PDSO-G3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	960mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	960mW
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	52m Ω @ 3.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1173pF @ 4V
Gate Charge (Qg) (Max) @ Vgs	15nC @ 4.5V
Rise Time	15.75ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	15.75 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	-3.7A
JEDEC-95 Code	TO-236AB
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.052Ohm
Drain to Source Breakdown Voltage	-8V
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead