NTTFS4H05NTAG

new-10%

Manufacturer part number:NTTFS4H05NTAG

Manufacturer:ON Semiconductor

Description:MOSFET NFET U8FL 25V 94A 3.3MOHM

Case Package:SOT-23

Datasheet:NTTFS4H05NTAG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	S-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.66W Ta 46.3W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.3m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1205pF @ 12V
Current - Continuous Drain (Id) @ 25°C	22.4A Ta 94A Tc
Gate Charge (Qg) (Max) @ Vgs	18.9nC @ 10V
Drain to Source Voltage (Vdss)	25V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	94A
Drain Current-Max (Abs) (ID)	22.4A
Pulsed Drain Current-Max (IDM)	304A
DS Breakdown Voltage-Min	25V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free