NVMFD5C650NLWFT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website
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NVMFD5C650NLWFT1G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
48 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2013
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin (Sn)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
3.5W Ta 125W Tc
FET Type
2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs
4.2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id
2.2V @ 98μA
Input Capacitance (Ciss) (Max) @ Vds
2546pF @ 25V
Current - Continuous Drain (Id) @ 25°C
21A Ta 111A Tc
Gate Charge (Qg) (Max) @ Vgs
16nC @ 4.5V
Drain to Source Voltage (Vdss)
60V
FET Feature
Standard
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,500
$1.20135
$1.20135
3,000
$1.11850
$3.3555
7,500
$1.07708
$7.53956
NVMFD5C650NLWFT1G Product Details
NVMFD5C650NLWFT1G Description
The half-dual N-channel power MOSFET is integrated with Schottky and packaged in DFN8 (SO8FL). These N-channel power MOSFET adopt a power-level solution in a common package to minimize board space, parasitic inductance and power loss. Double N-channel power MOSFET lead-free, halogen-free / BFR-free, in line with RoHS standards. Typical applications include DC-DC converters, system voltage rails and load points.
NVMFD5C650NLWFT1G Features
? Small Footprint (5x6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVMFD5C650NLWF ? Wettable Flank Option for Enhanced OpticalInspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free and are RoHS Compliant