NVTFS6H850NTAG

new-10%

Manufacturer part number:NVTFS6H850NTAG

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 9.5m Ω @ 10A, 10V ±20V 1140pF @ 40V 19nC @ 10V 80V 8-PowerWDFN

Case Package:SOT-23

Datasheet:NVTFS6H850NTAG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 5 hours ago)
Factory Lead Time	18 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	S-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.2W Ta 107W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	9.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 70μA
Input Capacitance (Ciss) (Max) @ Vds	1140pF @ 40V
Current - Continuous Drain (Id) @ 25°C	11A Ta 68A Tc
Gate Charge (Qg) (Max) @ Vgs	19nC @ 10V
Drain to Source Voltage (Vdss)	80V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	11A
Drain-source On Resistance-Max	0.0095Ohm
Pulsed Drain Current-Max (IDM)	300A
DS Breakdown Voltage-Min	80V
Avalanche Energy Rating (Eas)	271 mJ
RoHS Status	ROHS3 Compliant