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NVTFS6H850NTAG

  • NVTFS6H850NTAG
  • NVTFS6H850NTAG

NVTFS6H850NTAG

NVTFS6H850NTAG

ON Semiconductor

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 9.5m Ω @ 10A, 10V ±20V 1140pF @ 40V 19nC @ 10V 80V 8-PowerWDFN

SOT-23

NVTFS6H850NTAG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 5 hours ago)
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.2W Ta 107W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 70μA
Input Capacitance (Ciss) (Max) @ Vds 1140pF @ 40V
Current - Continuous Drain (Id) @ 25°C 11A Ta 68A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 11A
Drain-source On Resistance-Max 0.0095Ohm
Pulsed Drain Current-Max (IDM) 300A
DS Breakdown Voltage-Min 80V
Avalanche Energy Rating (Eas) 271 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,500 $0.48989 $0.48989
3,000 $0.45723 $1.37169
7,500 $0.43437 $3.04059
10,500 $0.41804 $4.1804
NVTFS6H850NTAG Product Details

NVTFS6H850NTAG Description


NVTFS6H850NTAG is an 80v Single N-Channel Power MOSFET. The onsemi NVTFS6H850NTAG can be applied in Switching Power Supplies, Power switches (High Side Driver, Low Side Driver, H-Bridges, etc.), 48V Systems, Motor Control DC/DC Converter, and Load Switch applications due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET NVTFS6H850NTAG is in the WDFN-8 package with 107W power dissipation.



NVTFS6H850NTAG Features


  • Small Footprint (3.3 x 3.3 mm) for Compact Design

  • Low RDS(on) to Minimize Conduction Losses

  • Low Capacitance to Minimize Driver Losses

  • Wettable Flanks Option

  • AEC?Q101 Qualified and PPAP Capable

  • Pb?Free and are RoHS Compliant



NVTFS6H850NTAG Applications


  • Switching Power Supplies

  • Power switches (High Side Driver, Low Side Driver, H-Bridges, etc.)

  • 48V Systems

  • Motor Control

  • DC/DC Converter

  • Load Switch


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