NZT560A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NZT560A Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
3
Weight
188mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
60V
Max Power Dissipation
1W
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
3A
Frequency
75MHz
Base Part Number
NZT560
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Case Connection
COLLECTOR
Gain Bandwidth Product
75MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
75MHz
Collector Emitter Saturation Voltage
400mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
250
Height
1.6mm
Length
6.5mm
Width
3.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.150113
$0.150113
10
$0.141616
$1.41616
100
$0.133600
$13.36
500
$0.126038
$63.019
1000
$0.118904
$118.904
NZT560A Product Details
NZT560A Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 500mA 2V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.The part has a transition frequency of 75MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.When collector current reaches its maximum, it can reach 3A volts.
NZT560A Features
the DC current gain for this device is 250 @ 500mA 2V a collector emitter saturation voltage of 400mV the vce saturation(Max) is 400mV @ 300mA, 3A the emitter base voltage is kept at 5V the current rating of this device is 3A a transition frequency of 75MHz
NZT560A Applications
There are a lot of ON Semiconductor NZT560A applications of single BJT transistors.