SBC857BLT1G Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 220 @ 2mA 5V.A collector emitter saturation voltage of -650mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.Emitter base voltages of 5V can achieve high levels of efficiency.There is a transition frequency of 100MHz in the part.A breakdown input voltage of 45V volts can be used.The maximum collector current is 100mA volts.

SBC857BLT1G Features

the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

SBC857BLT1G Applications

There are a lot of ON Semiconductor SBC857BLT1G applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter