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FJPF5021OTU

FJPF5021OTU

FJPF5021OTU

ON Semiconductor

FJPF5021OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJPF5021OTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 500V
Max Power Dissipation40W
Current Rating5A
Frequency 15MHz
Base Part Number FJPF5021
Number of Elements 1
Element ConfigurationSingle
Power Dissipation40W
Transistor Application SWITCHING
Gain Bandwidth Product15MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 600mA 5V
Current - Collector Cutoff (Max) 10μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 600mA, 3A
Collector Emitter Breakdown Voltage500V
Transition Frequency 15MHz
Collector Emitter Saturation Voltage1V
Collector Base Voltage (VCBO) 800V
Emitter Base Voltage (VEBO) 7V
hFE Min 15
Height 15.87mm
Length 10.16mm
Width 4.7mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:5602 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.081440$4.08144
10$3.850415$38.50415
100$3.632467$363.2467
500$3.426856$1713.428
1000$3.232883$3232.883

FJPF5021OTU Product Details

FJPF5021OTU Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 600mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 600mA, 3A.With the emitter base voltage set at 7V, an efficient operation can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (5A).There is a transition frequency of 15MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.

FJPF5021OTU Features


the DC current gain for this device is 20 @ 600mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 15MHz

FJPF5021OTU Applications


There are a lot of ON Semiconductor FJPF5021OTU applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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