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2STF2360

2STF2360

2STF2360

STMicroelectronics

2STF2360 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

2STF2360 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1.4W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 130MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number 2STF23
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.4W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 130MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) -60V
Max Collector Current -3A
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 150mA, 3A
Collector Emitter Breakdown Voltage 60V
Current - Collector (Ic) (Max) 3A
Transition Frequency 130MHz
Collector Emitter Saturation Voltage -300mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -6V
hFE Min 160
Max Junction Temperature (Tj) 150°C
Height 1.6mm
Length 4.6mm
Width 2.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.19084 $0.38168
5,000 $0.17981 $0.89905
12,500 $0.16879 $2.02548
25,000 $0.16695 $4.17375
2STF2360 Product Details

2STF2360 Overview


This device has a DC current gain of 160 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 150mA, 3A.Keeping the emitter base voltage at -6V allows for a high level of efficiency.As you can see, the part has a transition frequency of 130MHz.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below -3A volts.

2STF2360 Features


the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 150mA, 3A
the emitter base voltage is kept at -6V
a transition frequency of 130MHz

2STF2360 Applications


There are a lot of STMicroelectronics 2STF2360 applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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