2STF2360 Overview
This device has a DC current gain of 160 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 150mA, 3A.Keeping the emitter base voltage at -6V allows for a high level of efficiency.As you can see, the part has a transition frequency of 130MHz.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below -3A volts.
2STF2360 Features
the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 150mA, 3A
the emitter base voltage is kept at -6V
a transition frequency of 130MHz
2STF2360 Applications
There are a lot of STMicroelectronics 2STF2360 applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
