2STF2360 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
2STF2360 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
1.4W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
130MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
2STF23
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.4W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
130MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
-60V
Max Collector Current
-3A
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 1A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 150mA, 3A
Collector Emitter Breakdown Voltage
60V
Current - Collector (Ic) (Max)
3A
Transition Frequency
130MHz
Collector Emitter Saturation Voltage
-300mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
-60V
Emitter Base Voltage (VEBO)
-6V
hFE Min
160
Max Junction Temperature (Tj)
150°C
Height
1.6mm
Length
4.6mm
Width
2.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.19084
$0.38168
5,000
$0.17981
$0.89905
12,500
$0.16879
$2.02548
25,000
$0.16695
$4.17375
2STF2360 Product Details
2STF2360 Overview
This device has a DC current gain of 160 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 150mA, 3A.Keeping the emitter base voltage at -6V allows for a high level of efficiency.As you can see, the part has a transition frequency of 130MHz.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below -3A volts.
2STF2360 Features
the DC current gain for this device is 160 @ 1A 2V a collector emitter saturation voltage of -300mV the vce saturation(Max) is 500mV @ 150mA, 3A the emitter base voltage is kept at -6V a transition frequency of 130MHz
2STF2360 Applications
There are a lot of STMicroelectronics 2STF2360 applications of single BJT transistors.