MJD31CT4-A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
MJD31CT4-A Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
15W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
MJD31
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
15W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 3A 4V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage
100V
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.43658
$0.87316
5,000
$0.41817
$2.09085
MJD31CT4-A Product Details
MJD31CT4-A Overview
In this device, the DC current gain is 10 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.This device can take an input voltage of 100V volts before it breaks down.During maximum operation, collector current can be as low as 3A volts.
MJD31CT4-A Features
the DC current gain for this device is 10 @ 3A 4V the vce saturation(Max) is 1.2V @ 375mA, 3A the emitter base voltage is kept at 5V
MJD31CT4-A Applications
There are a lot of STMicroelectronics MJD31CT4-A applications of single BJT transistors.