SBCX19LT1G Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.With a collector emitter saturation voltage of 620mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 620mV @ 50mA, 500mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.When collector current reaches its maximum, it can reach 500mA volts.

SBCX19LT1G Features

the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 620mV
the vce saturation(Max) is 620mV @ 50mA, 500mA
the emitter base voltage is kept at 5V

SBCX19LT1G Applications

There are a lot of ON Semiconductor SBCX19LT1G applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter