SGH80N60UFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
SGH80N60UFDTU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Weight
6.401g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
Through Hole
Voltage - Rated DC
100V
Max Power Dissipation
195W
Current Rating
28A
Element Configuration
Single
Power Dissipation
195W
Input Type
Standard
Rise Time
50ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
80A
Reverse Recovery Time
95ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.1V
Test Condition
300V, 40A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 40A
Gate Charge
175nC
Current - Collector Pulsed (Icm)
220A
Td (on/off) @ 25°C
23ns/90ns
Switching Energy
570μJ (on), 590μJ (off)
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.509760
$4.50976
10
$4.254491
$42.54491
100
$4.013670
$401.367
500
$3.786481
$1893.2405
1000
$3.572152
$3572.152
SGH80N60UFDTU Product Details
SGH80N60UFDTU Description
SGH80N60UFDTU is a member of the UFD series of Insulated Gate Bipolar Transistors (IGBTs) developed by ON Semiconductor. It is able to deliver low conduction and switching losses, high input impedance, as well as short circuit ruggedness. As a result, it is ideally suitable for a wide range of applications, including AC & DC motor controls, general-purpose inverters, robotics, and servo controls.