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SGR20N40LTF

  • SGR20N40LTF
  • SGR20N40LTF

SGR20N40LTF

SGR20N40LTF

ON Semiconductor

SGR20N40LTF datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

SGR20N40LTF Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D-Pak
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Power - Max 45W
Voltage - Collector Emitter Breakdown (Max) 400V
Vce(on) (Max) @ Vge, Ic 8V @ 4.5V, 150A
IGBT Type Trench
Current - Collector Pulsed (Icm) 150A
SGR20N40LTF Product Details

SGR20N40LTF  Description

Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applications.



SGR20N40LTF  Features

High input impedance

High peak current capability (150A)

Easy gate drive

Surface Mount: SGR20N40L

Straight Lead: SGU20N40L



SGR20N40LTF Applications

Strobe flash


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