STGP12NB60HD

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Manufacturer part number:STGP12NB60HD

Manufacturer:STMicroelectronics

Description:STGP12NB60HD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGP12NB60HD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	125W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	18A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STGP12
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	100W
Input Type	Standard
Power - Max	125W
Transistor Application	MOTOR CONTROL
Drain to Source Voltage (Vdss)	600V
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.8V
Max Collector Current	30A
Reverse Recovery Time	80 ns
Continuous Drain Current (ID)	18A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2V
Turn On Time	51 ns
Test Condition	480V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 12A
Turn Off Time-Nom (toff)	295 ns
Gate Charge	68nC
Current - Collector Pulsed (Icm)	60A
Td (on/off) @ 25°C	5ns/91ns
Switching Energy	210μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free