2N6431 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N6431 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
1.8W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 30mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
50MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.38000
$2.38
500
$2.3562
$1178.1
1000
$2.3324
$2332.4
1500
$2.3086
$3462.9
2000
$2.2848
$4569.6
2500
$2.261
$5652.5
2N6431 PBFREE Product Details
2N6431 PBFREE Overview
DC current gain in this device equals 50 @ 30mA 10V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The device has a 300V maximal voltage - Collector Emitter Breakdown.
2N6431 PBFREE Features
the DC current gain for this device is 50 @ 30mA 10V the vce saturation(Max) is 500mV @ 2mA, 20mA
2N6431 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N6431 PBFREE applications of single BJT transistors.