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2N6431 PBFREE

2N6431 PBFREE

2N6431 PBFREE

Central Semiconductor Corp

2N6431 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2N6431 PBFREE Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Operating Temperature-65°C~200°C TJ
PackagingBulk
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) Not Applicable
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 1.8W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 30mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max) 300V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 50MHz
RoHS StatusROHS3 Compliant
In-Stock:3662 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.38000$2.38
500$2.3562$1178.1
1000$2.3324$2332.4
1500$2.3086$3462.9
2000$2.2848$4569.6
2500$2.261$5652.5

2N6431 PBFREE Product Details

2N6431 PBFREE Overview


DC current gain in this device equals 50 @ 30mA 10V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The device has a 300V maximal voltage - Collector Emitter Breakdown.

2N6431 PBFREE Features


the DC current gain for this device is 50 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA

2N6431 PBFREE Applications


There are a lot of Central Semiconductor Corp 2N6431 PBFREE applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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