SNSS35200MR6T1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1.5A 1.5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
SNSS35200MR6T1G Features
the DC current gain for this device is 100 @ 1.5A 1.5V
the vce saturation(Max) is 310mV @ 20mA, 2A
a transition frequency of 100MHz
SNSS35200MR6T1G Applications
There are a lot of ON Semiconductor SNSS35200MR6T1G applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
