Welcome to Hotenda.com Online Store!

logo
userjoin
Home

SNSS35200MR6T1G

  • SNSS35200MR6T1G
  • SNSS35200MR6T1G

SNSS35200MR6T1G

SNSS35200MR6T1G

ON Semiconductor

SNSS35200MR6T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

SNSS35200MR6T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case SOT-23-6
Surface Mount YES
Number of Pins 6
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory Other Transistors
Max Power Dissipation 625mW
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number NSS35200
Pin Count 6
Reference Standard AEC-Q101
Number of Elements 1
Configuration SINGLE
Transistor Application SWITCHING
Halogen Free Halogen Free
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 310mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1.5A 1.5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 310mV @ 20mA, 2A
Collector Emitter Breakdown Voltage 35V
Transition Frequency 100MHz
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 55V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.665557 $1.665557
10 $1.571280 $15.7128
100 $1.482340 $148.234
500 $1.398434 $699.217
1000 $1.319277 $1319.277
SNSS35200MR6T1G Product Details

SNSS35200MR6T1G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1.5A 1.5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

SNSS35200MR6T1G Features


the DC current gain for this device is 100 @ 1.5A 1.5V
the vce saturation(Max) is 310mV @ 20mA, 2A
a transition frequency of 100MHz

SNSS35200MR6T1G Applications


There are a lot of ON Semiconductor SNSS35200MR6T1G applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

Related Part Number

MJ15003G
ON Semiconductor
MJ15003G
$0 $/piece
2SD1816S-TL-H
ON Semiconductor
2SD1816S-TL-H
$0 $/piece
BF820W,135
Nexperia USA Inc.
BF820W,135
$0 $/piece
2N2904AL
Microsemi Corporation
2N2904AL
$0 $/piece
MJE200G
ON Semiconductor
MJE200G
$0 $/piece
KSD985OSTU
ON Semiconductor
KSD985OSTU
$0 $/piece
BSV52LT1
Rochester Electronics, LLC
BSV52LT1
$0 $/piece
JANTX2N2605
Microsemi Corporation
JANTX2N2605
$0 $/piece
PBSS5250X,135
Nexperia USA Inc.
PBSS5250X,135
$0 $/piece
2N3583
Central Semiconductor
2N3583
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News