IKW40N65H5AXKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IKW40N65H5AXKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2014
Series
Automotive, AEC-Q101, TrenchStop™
Pbfree Code
yes
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
250W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
250W
Transistor Application
POWER CONTROL
Halogen Free
Halogen Free
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
650V
Max Collector Current
74A
Reverse Recovery Time
75 ns
Collector Emitter Breakdown Voltage
650V
Turn On Time
32 ns
Test Condition
400V, 20A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 40A
Turn Off Time-Nom (toff)
204 ns
IGBT Type
Trench
Gate Charge
92nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
20ns/153ns
Switching Energy
380μJ (on), 120μJ (off)
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.908558
$1.908558
10
$1.800526
$18.00526
100
$1.698610
$169.861
500
$1.602462
$801.231
1000
$1.511757
$1511.757
IKW40N65H5AXKSA1 Product Details
IKW40N65H5AXKSA1 Description
IKW40N65H5AXKSA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IKW40N65H5AXKSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IKW40N65H5AXKSA1 has the common source configuration.