TIP32AG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
TIP32AG Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1997
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
40W
Peak Reflow Temperature (Cel)
260
Current Rating
3A
Frequency
3MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
TIP32
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
3MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 3A 4V
Current - Collector Cutoff (Max)
300μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
1.2V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
25
Height
15.75mm
Length
10.28mm
Width
4.82mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.55000
$0.55
50
$0.44540
$22.27
100
$0.35840
$35.84
500
$0.28392
$141.96
TIP32AG Product Details
TIP32AG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 3A 4V.A collector emitter saturation voltage of 1.2V allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.2V @ 375mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.This device has a current rating of 3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In this part, there is a transition frequency of 3MHz.During maximum operation, collector current can be as low as 3A volts.
TIP32AG Features
the DC current gain for this device is 10 @ 3A 4V a collector emitter saturation voltage of 1.2V the vce saturation(Max) is 1.2V @ 375mA, 3A the emitter base voltage is kept at 5V the current rating of this device is 3A a transition frequency of 3MHz
TIP32AG Applications
There are a lot of ON Semiconductor TIP32AG applications of single BJT transistors.