NP80N055NDG-S18-AY

new-10%

Manufacturer part number:NP80N055NDG-S18-AY

Manufacturer:Renesas Electronics America

Description:Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-262 Tube

Case Package:SOT-23

Datasheet:NP80N055NDG-S18-AY Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material	SILICON
Operating Temperature	175°C TJ
Packaging	Tube
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Pin Count	3
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.8W Ta 115W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.8W
Case Connection	DRAIN
Turn On Delay Time	17 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.9m Ω @ 40A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	135nC @ 10V
Rise Time	13ns
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	77 ns
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0069Ohm
Pulsed Drain Current-Max (IDM)	200A
DS Breakdown Voltage-Min	55V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free