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RJH60T04DPQ-A0#T0

RJH60T04DPQ-A0#T0

RJH60T04DPQ-A0#T0

Renesas Electronics America

IGBT TH

SOT-23

RJH60T04DPQ-A0#T0 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Operating Temperature 150°C TJ
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Subcategory Insulated Gate BIP Transistors
Reach Compliance Code compliant
Input Type Standard
Power - Max 208.3W
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 100ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 60A
Power Dissipation-Max (Abs) 208.3W
Test Condition 300V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 30A
IGBT Type Trench
Gate Charge 87nC
Current - Collector Pulsed (Icm) 180A
Td (on/off) @ 25°C 54ns/136ns
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 8V
RoHS Status RoHS Compliant

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