2N5366 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
2N5366 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 50mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
1V @ 30mA, 300mA
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
300MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.40227
$0.80454
2N5366 Product Details
2N5366 Overview
In this device, the DC current gain is 100 @ 50mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 30mA, 300mA.In this part, there is a transition frequency of 300MHz.Single BJT transistor shows a 40V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2N5366 Features
the DC current gain for this device is 100 @ 50mA 1V the vce saturation(Max) is 1V @ 30mA, 300mA a transition frequency of 300MHz
2N5366 Applications
There are a lot of Rochester Electronics, LLC 2N5366 applications of single BJT transistors.