DSS4220V-7 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 1A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 200mA, 2A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 260MHz.The breakdown input voltage is 20V volts.A maximum collector current of 2A volts can be achieved.
DSS4220V-7 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 260MHz
DSS4220V-7 Applications
There are a lot of Diodes Incorporated DSS4220V-7 applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter