DSS4220V-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DSS4220V-7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Number of Pins
6
Weight
3.005049mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Power Dissipation
600mW
Terminal Position
DUAL
Terminal Form
FLAT
Base Part Number
DSS4220
Pin Count
6
Number of Elements
1
Element Configuration
Single
Power Dissipation
600mW
Gain Bandwidth Product
260MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1A 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
350mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
260MHz
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
20V
Emitter Base Voltage (VEBO)
5V
hFE Min
220
Height
600μm
Length
1.6mm
Width
1.2mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$10.995040
$10.99504
10
$10.372679
$103.72679
100
$9.785546
$978.5546
500
$9.231648
$4615.824
1000
$8.709102
$8709.102
DSS4220V-7 Product Details
DSS4220V-7 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 1A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 200mA, 2A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 260MHz.The breakdown input voltage is 20V volts.A maximum collector current of 2A volts can be achieved.
DSS4220V-7 Features
the DC current gain for this device is 200 @ 1A 2V the vce saturation(Max) is 350mV @ 200mA, 2A the emitter base voltage is kept at 5V a transition frequency of 260MHz
DSS4220V-7 Applications
There are a lot of Diodes Incorporated DSS4220V-7 applications of single BJT transistors.