BC558CZL1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BC558CZL1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
JESD-609 Code
e0
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Additional Feature
EUROPEAN PART NUMBER
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
240
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
360MHz
Frequency - Transition
360MHz
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.02000
$0.02
500
$0.0198
$9.9
1000
$0.0196
$19.6
1500
$0.0194
$29.1
2000
$0.0192
$38.4
2500
$0.019
$47.5
BC558CZL1 Product Details
BC558CZL1 Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).As a result, the part has a transition frequency of 360MHz.A 30V maximal voltage - Collector Emitter Breakdown is present in the device.
BC558CZL1 Features
the DC current gain for this device is 420 @ 2mA 5V the vce saturation(Max) is 650mV @ 5mA, 100mA a transition frequency of 360MHz
BC558CZL1 Applications
There are a lot of Rochester Electronics, LLC BC558CZL1 applications of single BJT transistors.