BCP6925H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BCP6925H6327XTSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
PG-SOT223-4
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
3W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 500mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
20V
Current - Collector (Ic) (Max)
1A
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.23000
$0.23
500
$0.2277
$113.85
1000
$0.2254
$225.4
1500
$0.2231
$334.65
2000
$0.2208
$441.6
2500
$0.2185
$546.25
BCP6925H6327XTSA1 Product Details
BCP6925H6327XTSA1 Overview
In this device, the DC current gain is 160 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 100mA, 1A.PG-SOT223-4 is the supplier device package for this product.Detection of Collector Emitter Breakdown at 20V maximal voltage is present.
BCP6925H6327XTSA1 Features
the DC current gain for this device is 160 @ 500mA 1V the vce saturation(Max) is 500mV @ 100mA, 1A the supplier device package of PG-SOT223-4
BCP6925H6327XTSA1 Applications
There are a lot of Rochester Electronics, LLC BCP6925H6327XTSA1 applications of single BJT transistors.