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BCP6925H6327XTSA1

BCP6925H6327XTSA1

BCP6925H6327XTSA1

Rochester Electronics, LLC

BCP6925H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

BCP6925H6327XTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 3W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 500mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 20V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.23000 $0.23
500 $0.2277 $113.85
1000 $0.2254 $225.4
1500 $0.2231 $334.65
2000 $0.2208 $441.6
2500 $0.2185 $546.25
BCP6925H6327XTSA1 Product Details

BCP6925H6327XTSA1 Overview


In this device, the DC current gain is 160 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 100mA, 1A.PG-SOT223-4 is the supplier device package for this product.Detection of Collector Emitter Breakdown at 20V maximal voltage is present.

BCP6925H6327XTSA1 Features


the DC current gain for this device is 160 @ 500mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
the supplier device package of PG-SOT223-4

BCP6925H6327XTSA1 Applications


There are a lot of Rochester Electronics, LLC BCP6925H6327XTSA1 applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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