2SA1162-Y,LF Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 2mA 6V.This design offers maximum flexibility with a collector emitter saturation voltage of 100mV.A VCE saturation (Max) of 300mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 150mA volts.

2SA1162-Y,LF Features

the DC current gain for this device is 120 @ 2mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V

2SA1162-Y,LF Applications

There are a lot of Toshiba Semiconductor and Storage 2SA1162-Y,LF applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter