2N5684G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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2N5684G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Copper, Silver, Tin
Mounting Type
Through Hole
Package / Case
TO-204AE
Surface Mount
NO
Number of Pins
2
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Tray
Published
2006
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory
Other Transistors
Voltage - Rated DC
-80V
Max Power Dissipation
300W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
260
Current Rating
50mA
Frequency
2MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2N5684
Pin Count
2
Number of Elements
1
Element Configuration
Single
Power Dissipation
300W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
2MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
50A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 25A 2V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
5V @ 10A, 50A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
2MHz
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
15
Height
26.67mm
Length
38.8366mm
Width
8.509mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$15.74000
$15.74
10
$14.46800
$144.68
100
$12.21940
$1221.94
500
$10.87004
$5435.02
1,000
$9.99544
$9.99544
2N5684G Product Details
2N5684G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 25A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 5V @ 10A, 50A.Emitter base voltages of 5V can achieve high levels of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 50mA.In this part, there is a transition frequency of 2MHz.Single BJT transistor is possible to have a collector current as low as 50A volts at Single BJT transistors maximum.
2N5684G Features
the DC current gain for this device is 15 @ 25A 2V a collector emitter saturation voltage of 1V the vce saturation(Max) is 5V @ 10A, 50A the emitter base voltage is kept at 5V the current rating of this device is 50mA a transition frequency of 2MHz
2N5684G Applications
There are a lot of ON Semiconductor 2N5684G applications of single BJT transistors.