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2N5684G

2N5684G

2N5684G

ON Semiconductor

2N5684G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N5684G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact PlatingCopper, Silver, Tin
Mounting Type Through Hole
Package / Case TO-204AE
Surface MountNO
Number of Pins 2
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingTray
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation300W
Terminal Position BOTTOM
Terminal FormPIN/PEG
Peak Reflow Temperature (Cel) 260
Current Rating50mA
Frequency 2MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N5684
Pin Count2
Number of Elements 1
Element ConfigurationSingle
Power Dissipation300W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product2MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 50A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 25A 2V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 5V @ 10A, 50A
Collector Emitter Breakdown Voltage80V
Transition Frequency 2MHz
Collector Emitter Saturation Voltage1V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 15
Height 26.67mm
Length 38.8366mm
Width 8.509mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:446 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$15.74000$15.74
10$14.46800$144.68
100$12.21940$1221.94
500$10.87004$5435.02

2N5684G Product Details

2N5684G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 25A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 5V @ 10A, 50A.Emitter base voltages of 5V can achieve high levels of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 50mA.In this part, there is a transition frequency of 2MHz.Single BJT transistor is possible to have a collector current as low as 50A volts at Single BJT transistors maximum.

2N5684G Features


the DC current gain for this device is 15 @ 25A 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 5V @ 10A, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 2MHz

2N5684G Applications


There are a lot of ON Semiconductor 2N5684G applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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