2SC3325-Y,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
2SC3325-Y,LF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
Published
2014
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
200mW
Power - Max
200mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
250mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
50V
Max Breakdown Voltage
50V
Frequency - Transition
300MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.148046
$0.148046
10
$0.139666
$1.39666
100
$0.131760
$13.176
500
$0.124302
$62.151
1000
$0.117266
$117.266
2SC3325-Y,LF Product Details
2SC3325-Y,LF Overview
This device has a DC current gain of 120 @ 100mA 1V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.Emitter base voltages of 5V can achieve high levels of efficiency.As a result, it can handle voltages as low as 50V volts.During maximum operation, collector current can be as low as 500mA volts.
2SC3325-Y,LF Features
the DC current gain for this device is 120 @ 100mA 1V the vce saturation(Max) is 250mV @ 10mA, 100mA the emitter base voltage is kept at 5V
2SC3325-Y,LF Applications
There are a lot of Toshiba Semiconductor and Storage 2SC3325-Y,LF applications of single BJT transistors.