KSB798GTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSB798GTF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-243AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSSO-F3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
2W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
25V
Current - Collector (Ic) (Max)
1A
Transition Frequency
110MHz
Frequency - Transition
110MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.14000
$0.14
500
$0.1386
$69.3
1000
$0.1372
$137.2
1500
$0.1358
$203.7
2000
$0.1344
$268.8
2500
$0.133
$332.5
KSB798GTF Product Details
KSB798GTF Overview
This device has a DC current gain of 200 @ 100mA 1V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 100mA, 1A.The part has a transition frequency of 110MHz.This device displays a 25V maximum voltage - Collector Emitter Breakdown.
KSB798GTF Features
the DC current gain for this device is 200 @ 100mA 1V the vce saturation(Max) is 400mV @ 100mA, 1A a transition frequency of 110MHz
KSB798GTF Applications
There are a lot of Rochester Electronics, LLC KSB798GTF applications of single BJT transistors.