STD1802T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
STD1802T4 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
Other Transistors
Max Power Dissipation
15W
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
150MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STD18
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE
Power Dissipation
15W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 150mA, 3A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
150MHz
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.29112
$0.58224
5,000
$0.27328
$1.3664
12,500
$0.27030
$3.2436
STD1802T4 Product Details
STD1802T4 Overview
DC current gain in this device equals 200 @ 100mA 2V, which is the ratio of the base current to the collector current.When VCE saturation is 400mV @ 150mA, 3A, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.There is a transition frequency of 150MHz in the part.Single BJT transistor can take a breakdown input voltage of 60V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
STD1802T4 Features
the DC current gain for this device is 200 @ 100mA 2V the vce saturation(Max) is 400mV @ 150mA, 3A the emitter base voltage is kept at 6V a transition frequency of 150MHz
STD1802T4 Applications
There are a lot of STMicroelectronics STD1802T4 applications of single BJT transistors.