KSC1008OTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSC1008OTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
800mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 50mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
700mA
Transition Frequency
50MHz
Frequency - Transition
50MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.14000
$0.14
500
$0.1386
$69.3
1000
$0.1372
$137.2
1500
$0.1358
$203.7
2000
$0.1344
$268.8
2500
$0.133
$332.5
KSC1008OTA Product Details
KSC1008OTA Overview
This device has a DC current gain of 70 @ 50mA 2V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 400mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A transition frequency of 50MHz is present in the part.The device has a 60V maximal voltage - Collector Emitter Breakdown.
KSC1008OTA Features
the DC current gain for this device is 70 @ 50mA 2V the vce saturation(Max) is 400mV @ 50mA, 500mA a transition frequency of 50MHz
KSC1008OTA Applications
There are a lot of Rochester Electronics, LLC KSC1008OTA applications of single BJT transistors.