2SAR553P5T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SAR553P5T100 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
500mW
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
500mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 50mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 35mA, 700mA
Collector Emitter Breakdown Voltage
50V
Max Breakdown Voltage
50V
Frequency - Transition
320MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.048307
$0.048307
500
$0.035520
$17.76
1000
$0.029600
$29.6
2000
$0.027156
$54.312
5000
$0.025379
$126.895
10000
$0.023609
$236.09
15000
$0.022832
$342.48
50000
$0.022451
$1122.55
2SAR553P5T100 Product Details
2SAR553P5T100 Overview
In this device, the DC current gain is 180 @ 50mA 2V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 35mA, 700mA.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 2A volts.
2SAR553P5T100 Features
the DC current gain for this device is 180 @ 50mA 2V the vce saturation(Max) is 400mV @ 35mA, 700mA
2SAR553P5T100 Applications
There are a lot of ROHM Semiconductor 2SAR553P5T100 applications of single BJT transistors.