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MJE15033G

  • MJE15033G - MJE15033G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
  • MJE15033G - MJE15033G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

MJE15033G

MJE15033G

ON Semiconductor

MJE15033G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJE15033G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact PlatingTin
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -250V
Max Power Dissipation50W
Peak Reflow Temperature (Cel) 260
Current Rating-8A
Frequency 30MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation2W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product30MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 2A 5V
Current - Collector Cutoff (Max) 10μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage250V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage500mV
Collector Base Voltage (VCBO) 250V
Emitter Base Voltage (VEBO) 5V
hFE Min 10
Height 15.748mm
Length 10.2616mm
Width 4.826mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4284 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.62000$1.62
50$1.38160$69.08
100$1.14220$114.22
500$0.95076$475.38

MJE15033G Product Details

MJE15033G Description


MJE15033G belongs to the family of complementary silicon Epitaxial-Base power transistors that are manufactured by ON Semiconductor for use as high-frequency drivers in audio amplifiers. MJE15033G contains three pins, that is, emitter, base, and collector. It is embedded in the TO-220 package.



MJE15033G Features


  • High current gain

  • RoHS compliant

  • Embedded in the TO-220 package



MJE15033G Applications


  • Audio amplifiers

  • Switching applications

  • General-purpose amplifiers


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