2PB1219AQ,115 Overview

DC current gain in this device equals 85 @ 150mA 10V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 600mV @ 30mA, 300mA means Ic has reached its maximum value(saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

2PB1219AQ,115 Features

the DC current gain for this device is 85 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

2PB1219AQ,115 Applications

There are a lot of Nexperia USA Inc. 2PB1219AQ,115 applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting