SI7913DN-T1-GE3

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Manufacturer part number:SI7913DN-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 2P-CH 20V 5A PPAK 1212-8

Case Package:SOT-23

Datasheet:SI7913DN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8 Dual
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	37MOhm
Subcategory	Other Transistors
Max Power Dissipation	1.3W
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SI7913
Pin Count	8
JESD-30 Code	S-XDSO-C6
Qualification Status	Not Qualified
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.3W
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	37m Ω @ 7.4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Current - Continuous Drain (Id) @ 25°C	5A
Gate Charge (Qg) (Max) @ Vgs	24nC @ 4.5V
Rise Time	70ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	70 ns
Turn-Off Delay Time	72 ns
Continuous Drain Current (ID)	-7.4A
Threshold Voltage	-1V
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	5A
Drain to Source Breakdown Voltage	-20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.04mm
Length	3.05mm
Width	3.05mm
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free