SMBTA14E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
SMBTA14E6327HTSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
330mW
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
20000 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 100μA, 100mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
300mA
Frequency - Transition
125MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
18,000
$0.07358
$1.32444
SMBTA14E6327HTSA1 Product Details
SMBTA14E6327HTSA1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.A VCE saturation (Max) of 1.5V @ 100μA, 100mA means Ic has reached its maximum value(saturated).Supplier device package SOT-23-3 comes with the product.There is a 30V maximal voltage in the device due to collector-emitter breakdown.
SMBTA14E6327HTSA1 Features
the DC current gain for this device is 20000 @ 100mA 5V the vce saturation(Max) is 1.5V @ 100μA, 100mA the supplier device package of SOT-23-3
SMBTA14E6327HTSA1 Applications
There are a lot of Rochester Electronics, LLC SMBTA14E6327HTSA1 applications of single BJT transistors.