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SMBTA14E6327HTSA1

SMBTA14E6327HTSA1

SMBTA14E6327HTSA1

Rochester Electronics, LLC

SMBTA14E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

SMBTA14E6327HTSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 330mW
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 300mA
Frequency - Transition 125MHz
RoHS StatusROHS3 Compliant
In-Stock:64155 items

Pricing & Ordering

QuantityUnit PriceExt. Price

SMBTA14E6327HTSA1 Product Details

SMBTA14E6327HTSA1 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.A VCE saturation (Max) of 1.5V @ 100μA, 100mA means Ic has reached its maximum value(saturated).Supplier device package SOT-23-3 comes with the product.There is a 30V maximal voltage in the device due to collector-emitter breakdown.

SMBTA14E6327HTSA1 Features


the DC current gain for this device is 20000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the supplier device package of SOT-23-3

SMBTA14E6327HTSA1 Applications


There are a lot of Rochester Electronics, LLC SMBTA14E6327HTSA1 applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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