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BD13610STU

BD13610STU

BD13610STU

ON Semiconductor

BD13610STU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD13610STU Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Weight 761mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -45V
Max Power Dissipation 1.25W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -1.5A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BD136
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 1.25W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 75MHz
Collector Emitter Saturation Voltage -500mV
Max Breakdown Voltage 400V
Collector Base Voltage (VCBO) -45V
Emitter Base Voltage (VEBO) -5V
hFE Min 40
Height 11mm
Length 8mm
Width 3.25mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.201680 $5.20168
10 $4.907245 $49.07245
100 $4.629477 $462.9477
500 $4.367431 $2183.7155
1000 $4.120218 $4120.218
BD13610STU Product Details

BD13610STU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -1.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.75MHz is present in the transition frequency.An input voltage of 400V volts is the breakdown voltage.Maximum collector currents can be below 1.5A volts.

BD13610STU Features


the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1.5A
a transition frequency of 75MHz

BD13610STU Applications


There are a lot of ON Semiconductor BD13610STU applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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