BD13610STU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -1.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.75MHz is present in the transition frequency.An input voltage of 400V volts is the breakdown voltage.Maximum collector currents can be below 1.5A volts.
BD13610STU Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1.5A
a transition frequency of 75MHz
BD13610STU Applications
There are a lot of ON Semiconductor BD13610STU applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
