BD13610STU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD13610STU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 5 days ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Weight
761mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-45V
Max Power Dissipation
1.25W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
-1.5A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BD136
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.25W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
75MHz
Collector Emitter Saturation Voltage
-500mV
Max Breakdown Voltage
400V
Collector Base Voltage (VCBO)
-45V
Emitter Base Voltage (VEBO)
-5V
hFE Min
40
Height
11mm
Length
8mm
Width
3.25mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.201680
$5.20168
10
$4.907245
$49.07245
100
$4.629477
$462.9477
500
$4.367431
$2183.7155
1000
$4.120218
$4120.218
BD13610STU Product Details
BD13610STU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -1.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.75MHz is present in the transition frequency.An input voltage of 400V volts is the breakdown voltage.Maximum collector currents can be below 1.5A volts.
BD13610STU Features
the DC current gain for this device is 63 @ 150mA 2V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at -5V the current rating of this device is -1.5A a transition frequency of 75MHz
BD13610STU Applications
There are a lot of ON Semiconductor BD13610STU applications of single BJT transistors.