2SA1577T106R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SA1577T106R Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
-32V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-500mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SA1577
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power - Max
200mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
600mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA 3V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 30mA, 300mA
Collector Emitter Breakdown Voltage
32V
Transition Frequency
200MHz
Max Breakdown Voltage
32V
Collector Base Voltage (VCBO)
-40V
Emitter Base Voltage (VEBO)
-5V
hFE Min
82
Continuous Collector Current
-500mA
VCEsat-Max
0.4 V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.029507
$0.029507
500
$0.021696
$10.848
1000
$0.018080
$18.08
2000
$0.016587
$33.174
5000
$0.015502
$77.51
10000
$0.014420
$144.2
15000
$0.013946
$209.19
50000
$0.013713
$685.65
2SA1577T106R Product Details
2SA1577T106R Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 3V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 30mA, 300mA.Continuous collector voltages of -500mA should be maintained to achieve high efficiency.The base voltage of the emitter can be kept at -5V to achieve high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.In this part, there is a transition frequency of 200MHz.A breakdown input voltage of 32V volts can be used.In extreme cases, the collector current can be as low as 500mA volts.
2SA1577T106R Features
the DC current gain for this device is 120 @ 100mA 3V the vce saturation(Max) is 600mV @ 30mA, 300mA the emitter base voltage is kept at -5V the current rating of this device is -500mA a transition frequency of 200MHz
2SA1577T106R Applications
There are a lot of ROHM Semiconductor 2SA1577T106R applications of single BJT transistors.