2SD2537T100V datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
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2SD2537T100V Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Contact Plating
Copper, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN COPPER
Subcategory
Other Transistors
Voltage - Rated DC
25V
Max Power Dissipation
2W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
1.2A
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SD2537
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Gain Bandwidth Product
200MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
25V
Max Collector Current
1.2A
DC Current Gain (hFE) (Min) @ Ic, Vce
820 @ 500mA 5V
Current - Collector Cutoff (Max)
300nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 500mA
Collector Emitter Breakdown Voltage
25V
Max Frequency
100MHz
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
300mV
Max Breakdown Voltage
25V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
12V
hFE Min
820
Continuous Collector Current
1.2A
Height
1.4mm
Length
4.7mm
Width
2.7mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.336720
$0.33672
10
$0.317660
$3.1766
100
$0.299680
$29.968
500
$0.282717
$141.3585
1000
$0.266714
$266.714
2SD2537T100V Product Details
2SD2537T100V Overview
In this device, the DC current gain is 820 @ 500mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltages should be kept at 1.2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1.2A).A transition frequency of 200MHz is present in the part.This device can take an input voltage of 25V volts before it breaks down.During maximum operation, collector current can be as low as 1.2A volts.
2SD2537T100V Features
the DC current gain for this device is 820 @ 500mA 5V a collector emitter saturation voltage of 300mV the vce saturation(Max) is 300mV @ 10mA, 500mA the emitter base voltage is kept at 12V the current rating of this device is 1.2A a transition frequency of 200MHz
2SD2537T100V Applications
There are a lot of ROHM Semiconductor 2SD2537T100V applications of single BJT transistors.