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2SD2537T100V

2SD2537T100V

2SD2537T100V

ROHM Semiconductor

2SD2537T100V datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

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2SD2537T100V Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN COPPER
Subcategory Other Transistors
Voltage - Rated DC 25V
Max Power Dissipation 2W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 1.2A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SD2537
Pin Count 3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Gain Bandwidth Product 200MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 1.2A
DC Current Gain (hFE) (Min) @ Ic, Vce 820 @ 500mA 5V
Current - Collector Cutoff (Max) 300nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 500mA
Collector Emitter Breakdown Voltage 25V
Max Frequency 100MHz
Transition Frequency 200MHz
Collector Emitter Saturation Voltage 300mV
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 12V
hFE Min 820
Continuous Collector Current 1.2A
Height 1.4mm
Length 4.7mm
Width 2.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.336720 $0.33672
10 $0.317660 $3.1766
100 $0.299680 $29.968
500 $0.282717 $141.3585
1000 $0.266714 $266.714
2SD2537T100V Product Details

2SD2537T100V Overview


In this device, the DC current gain is 820 @ 500mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltages should be kept at 1.2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1.2A).A transition frequency of 200MHz is present in the part.This device can take an input voltage of 25V volts before it breaks down.During maximum operation, collector current can be as low as 1.2A volts.

2SD2537T100V Features


the DC current gain for this device is 820 @ 500mA 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 10mA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 1.2A
a transition frequency of 200MHz

2SD2537T100V Applications


There are a lot of ROHM Semiconductor 2SD2537T100V applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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