2SA2029T2LR Overview
This device has a DC current gain of 180 @ 1mA 6V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is essential to maintain the continuous collector voltage at -150mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.There is a breakdown input voltage of 50V volts that it can take.A maximum collector current of 150mA volts is possible.
2SA2029T2LR Features
the DC current gain for this device is 180 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 140MHz
2SA2029T2LR Applications
There are a lot of ROHM Semiconductor 2SA2029T2LR applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
