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2SAR340PT100Q

2SAR340PT100Q

2SAR340PT100Q

ROHM Semiconductor

2SAR340PT100Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SAR340PT100Q Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2015
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation500mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 500mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 10mA 10V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage400V
Max Breakdown Voltage 400V
RoHS StatusROHS3 Compliant
In-Stock:11735 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.072512$2.072512
10$1.955200$19.552
100$1.844528$184.4528
500$1.740121$870.0605
1000$1.641624$1641.624

2SAR340PT100Q Product Details

2SAR340PT100Q Overview


This device has a DC current gain of 82 @ 10mA 10V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 2mA, 20mA.The breakdown input voltage is 400V volts.Collector current can be as low as 100mA volts at its maximum.

2SAR340PT100Q Features


the DC current gain for this device is 82 @ 10mA 10V
the vce saturation(Max) is 400mV @ 2mA, 20mA

2SAR340PT100Q Applications


There are a lot of ROHM Semiconductor 2SAR340PT100Q applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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