2SAR340PT100Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SAR340PT100Q Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2015
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
500mW
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
500mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
82 @ 10mA 10V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage
400V
Max Breakdown Voltage
400V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.072512
$2.072512
10
$1.955200
$19.552
100
$1.844528
$184.4528
500
$1.740121
$870.0605
1000
$1.641624
$1641.624
2SAR340PT100Q Product Details
2SAR340PT100Q Overview
This device has a DC current gain of 82 @ 10mA 10V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 2mA, 20mA.The breakdown input voltage is 400V volts.Collector current can be as low as 100mA volts at its maximum.
2SAR340PT100Q Features
the DC current gain for this device is 82 @ 10mA 10V the vce saturation(Max) is 400mV @ 2mA, 20mA
2SAR340PT100Q Applications
There are a lot of ROHM Semiconductor 2SAR340PT100Q applications of single BJT transistors.