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D45H2A

D45H2A

D45H2A

ON Semiconductor

D45H2A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

D45H2A Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Lifecycle Status CONSULT SALES OFFICE (Last Updated: 1 week ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -30V
Max Power Dissipation 60W
Current Rating -8A
Frequency 25MHz
Base Part Number D45H
Number of Elements 1
Element Configuration Single
Power Dissipation 60W
Transistor Application SWITCHING
Gain Bandwidth Product 25MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 8A 5V
Current - Collector Cutoff (Max) 10μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Collector Emitter Breakdown Voltage 30V
Transition Frequency 25MHz
Collector Emitter Saturation Voltage 1V
Emitter Base Voltage (VEBO) 1.5V
hFE Min 100
Height 9.2mm
Length 9.9mm
Width 4.5mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.70000 $0.7
500 $0.693 $346.5
1000 $0.686 $686
1500 $0.679 $1018.5
2000 $0.672 $1344
2500 $0.665 $1662.5
D45H2A Product Details

D45H2A Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 8A 5V.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 400mA, 8A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 1.5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -8A.There is a transition frequency of 25MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.

D45H2A Features


the DC current gain for this device is 100 @ 8A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 1.5V
the current rating of this device is -8A
a transition frequency of 25MHz

D45H2A Applications


There are a lot of ON Semiconductor D45H2A applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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