2SB1189T100R Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 180 @ 100mA 3V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of -200mV.A VCE saturation (Max) of 400mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at -700mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -700mA.The part has a transition frequency of 100MHz.There is a breakdown input voltage of 80V volts that it can take.In extreme cases, the collector current can be as low as 700mA volts.
2SB1189T100R Features
the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -700mA
a transition frequency of 100MHz
2SB1189T100R Applications
There are a lot of ROHM Semiconductor 2SB1189T100R applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
