SS8550DTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
SS8550DTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Weight
240mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-25V
Max Power Dissipation
1W
Terminal Position
BOTTOM
Current Rating
-1.5A
Frequency
200MHz
Base Part Number
SS8550
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
25V
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
500mV @ 80mA, 800mA
Collector Emitter Breakdown Voltage
25V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
-280mV
Max Breakdown Voltage
25V
Collector Base Voltage (VCBO)
-40V
Emitter Base Voltage (VEBO)
-6V
hFE Min
85
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.075290
$0.07529
500
$0.055360
$27.68
1000
$0.046133
$46.133
2000
$0.042324
$84.648
5000
$0.039555
$197.775
10000
$0.036796
$367.96
15000
$0.035586
$533.79
50000
$0.034991
$1749.55
SS8550DTA Product Details
SS8550DTA Overview
DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -280mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 80mA, 800mA.An emitter's base voltage can be kept at -6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1.5A current rating.A transition frequency of 200MHz is present in the part.Single BJT transistor can be broken down at a voltage of 25V volts.When collector current reaches its maximum, it can reach 1.5A volts.
SS8550DTA Features
the DC current gain for this device is 160 @ 100mA 1V a collector emitter saturation voltage of -280mV the vce saturation(Max) is 500mV @ 80mA, 800mA the emitter base voltage is kept at -6V the current rating of this device is -1.5A a transition frequency of 200MHz
SS8550DTA Applications
There are a lot of ON Semiconductor SS8550DTA applications of single BJT transistors.