SS8550DTA Overview

DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -280mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 80mA, 800mA.An emitter's base voltage can be kept at -6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1.5A current rating.A transition frequency of 200MHz is present in the part.Single BJT transistor can be broken down at a voltage of 25V volts.When collector current reaches its maximum, it can reach 1.5A volts.

SS8550DTA Features

the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -280mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at -6V
the current rating of this device is -1.5A
a transition frequency of 200MHz

SS8550DTA Applications

There are a lot of ON Semiconductor SS8550DTA applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver