BUD42DT4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BUD42DT4G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
DPAK
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
25W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 2A 5V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
1V @ 500mA, 2A
Voltage - Collector Emitter Breakdown (Max)
350V
Current - Collector (Ic) (Max)
4A
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.33000
$0.33
500
$0.3267
$163.35
1000
$0.3234
$323.4
1500
$0.3201
$480.15
2000
$0.3168
$633.6
2500
$0.3135
$783.75
BUD42DT4G Product Details
BUD42DT4G Overview
This device has a DC current gain of 10 @ 2A 5V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Product package DPAK comes from the supplier.The device has a 350V maximal voltage - Collector Emitter Breakdown.
BUD42DT4G Features
the DC current gain for this device is 10 @ 2A 5V the vce saturation(Max) is 1V @ 500mA, 2A the supplier device package of DPAK
BUD42DT4G Applications
There are a lot of Rochester Electronics, LLC BUD42DT4G applications of single BJT transistors.