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MMST2907AT146

MMST2907AT146

MMST2907AT146

ROHM Semiconductor

MMST2907AT146 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

MMST2907AT146 Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -600mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number T2907A
Pin Count 3
Number of Elements 1
Element Configuration Single
Power - Max 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 60V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage -1.6V
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -5V
hFE Min 50
Continuous Collector Current -600mA
VCEsat-Max 0.6 V
Turn Off Time-Max (toff) 100ns
Collector-Base Capacitance-Max 7pF
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.555521 $6.555521
10 $6.184453 $61.84453
100 $5.834391 $583.4391
500 $5.504141 $2752.0705
1000 $5.192587 $5192.587
MMST2907AT146 Product Details

MMST2907AT146 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.The collector emitter saturation voltage is -1.6V, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltage should be kept at -600mA for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -600mA current rating.200MHz is present in the transition frequency.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 600mA volts.

MMST2907AT146 Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz

MMST2907AT146 Applications


There are a lot of ROHM Semiconductor MMST2907AT146 applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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