2SB1733TL Overview
In this device, the DC current gain is 270 @ 100mA 2V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -150mV, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 350mV @ 25mA, 500mA.An emitter's base voltage can be kept at -6V to gain high efficiency.320MHz is present in the transition frequency.Breakdown input voltage is 30V volts.A maximum collector current of 1A volts is possible.
2SB1733TL Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 320MHz
2SB1733TL Applications
There are a lot of ROHM Semiconductor 2SB1733TL applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
