2SC4617EBTLP Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 1mA 6V.As it features a collector emitter saturation voltage of 400mV, it allows for maximum design flexibility.A VCE saturation (Max) of 400mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A 150mA continuous collector voltage is necessary to achieve high efficiency.The base voltage of the emitter can be kept at 7V to achieve high efficiency.When collector current reaches its maximum, it can reach 150mA volts.
2SC4617EBTLP Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
2SC4617EBTLP Applications
There are a lot of ROHM Semiconductor 2SC4617EBTLP applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
