2SA1587-GR,LF Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 6V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 1mA, 10mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.As a result, it can handle voltages as low as 120V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

2SA1587-GR,LF Features

the DC current gain for this device is 200 @ 2mA 6V
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V

2SA1587-GR,LF Applications

There are a lot of Toshiba Semiconductor and Storage 2SA1587-GR,LF applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting